mar. 2002 type name voltage class 3.2 0.2 19.5 min 23 1 2 0.3 1.0 0.2 5.45 15.9 max 5.0 20.0 0.5 2 4 4.5 0.3 1.5 0.2 2.8 0.3 5.45 4 0.6 0.2 4 24 1 3 1 2 3 4 t 1 terminal t 2 terminal gate terminal t 2 terminal outline drawing dimensions in mm to-3p ? measurement point of case temperature mitsubishi semiconductor ? triac ? bcr30am medium power use non-insulated type, planar passivation type bcr30am application contactless ac switches, light dimmer, on/off and speed control of small induction motors, on/off control of copier lamps, microwave ovens ? t (rms) ...................................................................... 30a ? drm ....................................................................... 600v ? fgt ! , i rgt ! , i rgt # ............................................ 50ma symbol v drm v dsm parameter repetitive peak off-state voltage ? 1 non-repetitive peak off-state voltage ? 1 voltage class unit v v maximum ratings 12 600 720 symbol i t (rms) i tsm i 2 t p gm p g (av) v gm i gm t j t stg parameter rms on-state current surge on-state current i 2 t for fusing peak gate power dissipation average gate power dissipation peak gate voltage peak gate current junction temperature storage temperature weight conditions commercial frequency, sine full wave 360 conduction, t c =75 c 60hz sinewave 1 full cycle, peak value, non-repetitive value corresponding to 1 cycle of half wave 60hz, surge on-state current typical value unit a a a 2 s w w v a c c g ratings 30 300 378 5 0.5 10 2 ?0 ~ +125 ?0 ~ +125 4.8 ? 1. gate open. refer to the page 6 as to the product guaranteed maximum junction temperature 150 c
mar. 2002 supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c mitsubishi semiconductor ? triac ? bcr30am medium power use non-insulated type, planar passivation type ? 2. measurement using the gate trigger characteristics measurement circuit. ? 3. the contact thermal resistance r th (b-f) in case of greasing is 0.3 c/w. ? 4. test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. symbol i drm v tm v fgt ! v rgt ! v rgt # i fgt ! i rgt ! i rgt # v gd r th (j-c) (dv/dt) c parameter repetitive peak off-state current on-state voltage gate trigger voltage ? 2 gate trigger current ? 2 gate non-trigger voltage thermal resistance critical-rate of rise of off-state commutating voltage test conditions t j =125 c, v drm applied t c =25 c, i tm =45a t j =25 c, v d =6v, r l =6 ? , r g =330 ? t j =25 c, v d =6v, r l =6 ? , r g =330 ? t j =125 c, v d =1/2v drm junction to case ? 3 t j =125 c unit ma v v v v ma ma ma v c/w v/ s typ. ! @ # ! @ # electrical characteristics test conditions commutating voltage and current waveforms (inductive load) 1. junction temperature t j =125 c 2. rate of decay of on-state commutating current (di/dt) c = 16a/ms 3. peak off-state voltage v d =400v limits min. 0.2 20 max. 3.0 1.6 2.5 2.5 2.5 50 50 50 1.2 performance curves refer to the page 6 as to the product guaranteed maximum junction temperature 150 c 10 0 23 5710 1 200 100 23 5710 2 44 300 400 500 0 4.4 2.4 0.8 0.4 1.2 1.6 2.0 2.8 3.2 3.6 4.0 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 t j = 25 c maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) ? 4
mar. 2002 mitsubishi semiconductor ? triac ? bcr30am medium power use non-insulated type, planar passivation type refer to the page 6 as to the product guaranteed maximum junction temperature 150 c 10 0 23 10 1 5710 2 23 5710 3 23 5710 4 10 2 7 5 3 2 10 1 7 5 3 2 7 5 3 2 10 1 v gt = 2.5v v gm = 10v i fgt i, i rgt i, i rgt iii v gd = 0.2v p g(av) = 0.5w p gm = 5w i gm = 2a 10 2 0.2 0.4 23 10 1 5710 0 23 5710 1 23 57 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 23 10 2 5710 3 0 10 1 10 3 7 5 3 2 60 20 20 10 2 7 5 3 2 60 100 140 4 4 40 0 40 80 120 10 1 10 3 7 5 3 2 60 20 20 10 2 7 5 3 2 60 100 140 4 4 40 0 40 80 120 i rgt i, i rgt iii i fgt i 30 20 50 0 10 40 50 40 30 20 10 0 160 120 100 60 20 0 40 0 40 80 140 10 20 30 gate voltage (v) gate current (ma) gate characteristics ( , ? and ?? ) typical example gate trigger current vs. junction temperature junction temperature ( c) 100 (%) gate trigger current (t j = t c) gate trigger current (t j = 25 c) typical example gate trigger voltage vs. junction temperature junction temperature ( c) 100 (%) gate trigger voltage ( t j = t c ) gate trigger voltage ( t j = 25 c ) maximum transient thermal impedance characteristics (junction to case) transient thermal impedance ( c/w) conduction time (cycles at 60hz) 360 conduction resistive, inductive loads maximum on-state power dissipation on-state power dissipation (w) rms on-state current (a) curves apply regardless of conduction angle resistive, inductive loads allowable case temperature vs. rms on-state current case temperature ( c) rms on-state current (a)
mar. 2002 mitsubishi semiconductor ? triac ? bcr30am medium power use non-insulated type, planar passivation type refer to the page 6 as to the product guaranteed maximum junction temperature 150 c 160 120 100 60 20 0 40 0 40 80 140 10 20 30 160 120 100 60 20 0 4.0 0 40 80 140 1.0 2.0 3.0 140 40 40 60 20 0 20 60 80 100 120 10 5 7 5 3 2 10 4 7 5 3 2 10 3 7 5 3 2 10 2 40 60 40 20 160 120 100 60 20 0 140 60 80 140 40 20 080 100 120 60 40 20 140 60 40 20 080 100 120 10 1 10 3 7 5 3 2 10 2 7 5 3 2 4 4 160 0 23 10 1 5710 2 23 5710 3 23 5710 4 80 60 40 20 100 120 140 allowable ambient temperature vs. rms on-state current ambient temperature ( c) rms on-state current (a) all fins are black painted aluminum and greased natural convection 160 160 t2.3 120 120 t2.3 100 100 t2.3 allowable ambient temperature vs. rms on-state current ambient temperature ( c) rms on-state current (a) natural convection no fins curves apply regardless of conduction angle resistive, inductive loads curves apply regardless of conduction angle typical example repetitive peak off-state current vs. junction temperature junction temperature ( c) 100 (%) repetitive peak off-state current ( t j = t c ) repetitive peak off-state current ( t j = 25 c ) typical example holding current vs. junction temperature junction temperature ( c) 100 (%) holding current ( t j = t c ) holding current ( t j = 25 c ) typical example breakover voltage vs. junction temperature junction temperature ( c) 100 (%) breakover voltage ( t j = t c ) breakover voltage ( t j = 25 c ) breakover voltage vs. rate of rise of off-state voltage rate of rise of off-state voltage (v/ s) 100 (%) breakover voltage ( dv/dt = xv/ s ) breakover voltage ( dv/dt = 1v/ s ) typical example t j = 125 c i quadrant iii quadrant
mar. 2002 mitsubishi semiconductor ? triac ? bcr30am medium power use non-insulated type, planar passivation type refer to the page 6 as to the product guaranteed maximum junction temperature 150 c 10 1 10 3 7 5 3 2 10 0 23 5710 1 10 2 7 5 3 2 23 5710 2 4 4 44 i fgt i i rgt iii i rgt i 10 0 10 1 23 5710 2 7 7 5 4 4 3 2 23 5710 3 10 1 7 5 3 2 44 6 ? 6 ? 6 ? 6v 6v 6v r g r g r g a v a v a v commutation characteristics critical rate of rise of off-state commutating voltage (v/ s) rate of decay of on-state commutating current (a /ms) typical example t c = 125 c i t = 4a = 500 s v d = 200v f = 3hz i quadrant iii quadrant minimum charac- teristics value supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c gate trigger current vs. gate current pulse width gate current pulse width ( s) 100 (%) gate trigger current ( tw ) gate trigger current ( dc ) typical example test procedure 1 test procedure 3 test procedure 2 gate trigger characteristics test circuits
mar. 2002 type name voltage class 3.2 0.2 19.5 min 23 1 2 0.3 1.0 0.2 5.45 15.9 max 5.0 20.0 0.5 2 4 4.5 0.3 1.5 0.2 2.8 0.3 5.45 4 0.6 0.2 4 24 1 3 1 2 3 4 t 1 terminal t 2 terminal gate terminal t 2 terminal outline drawing dimensions in mm to-3p ? measurement point of case temperature mitsubishi semiconductor ? triac ? bcr30am medium power use non-insulated type, planar passivation type bcr30am application contactless ac switches, light dimmer, on/off and speed control of small induction motors, on/off control of copier lamps, microwave ovens (warning) 1. refer to the recommended circuit values around the triac before using. 2. be sure to exchange the specification before using. if not exchanged, general triacs will be supplied. i t (rms) ...................................................................... 30a v drm ....................................................................... 600v i fgt ! , i rgt ! , i rgt # ............................................ 50ma symbol v drm v dsm parameter repetitive peak off-state voltage ? 1 non-repetitive peak off-state voltage ? 1 voltage class unit v v maximum ratings 12 600 720 symbol i t (rms) i tsm i 2 t p gm p g (av) v gm i gm t j t stg parameter rms on-state current surge on-state current i 2 t for fusing peak gate power dissipation average gate power dissipation peak gate voltage peak gate current junction temperature storage temperature weight conditions commercial frequency, sine full wave 360 conduction, t c =100 c 60hz sinewave 1 full cycle, peak value, non-repetitive value corresponding to 1 cycle of half wave 60hz, surge on-state current typical value unit a a a 2 s w w v a c c g ratings 30 300 378 5 0.5 10 2 40 ~ +150 40 ~ +150 4.8 ? 1. gate open. the product guaranteed maximum junction temperature 150 c (see warning.)
mar. 2002 supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c mitsubishi semiconductor ? triac ? bcr30am medium power use non-insulated type, planar passivation type ? 2. measurement using the gate trigger characteristics measurement circuit. ? 3. the contact thermal resistance r th (b-f) in case of greasing is 0.3 c/w. ? 4. test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. symbol i drm v tm v fgt ! v rgt ! v rgt # i fgt ! i rgt ! i rgt # v gd r th (j-c) (dv/dt) c parameter repetitive peak off-state current on-state voltage gate trigger voltage ? 2 gate trigger current ? 2 gate non-trigger voltage thermal resistance critical-rate of rise of off-state commutating voltage test conditions t j =125 c/150 c, v drm applied t c =25 c, i tm =45a t j =25 c, v d =6v, r l =6 ? , r g =330 ? t j =25 c, v d =6v, r l =6 ? , r g =330 ? t j =125 c/150 c, v d =1/2v drm junction to case ? 3 t j =125 c/150 c unit ma v v v v ma ma ma v c/w v/ s typ. ! @ # ! @ # electrical characteristics test conditions commutating voltage and current waveforms (inductive load) 1. junction temperature t j =125 c/150 c 2. rate of decay of on-state commutating current (di/dt) c = 16a/ms 3. peak off-state voltage v d =400v limits min. 0.2/0.1 20/2 max. 3.0/5.0 1.6 2.5 2.5 2.5 50 50 50 1.2 performance curves the product guaranteed maximum junction temperature 150 c (see warning.) 10 0 23 5710 1 200 100 23 5710 2 44 300 400 500 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 t j = 25 c t j = 150 c maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) ? 4
mar. 2002 mitsubishi semiconductor ? triac ? bcr30am medium power use non-insulated type, planar passivation type the product guaranteed maximum junction temperature 150 c (see warning.) 10 0 23 10 1 5710 2 23 5710 3 23 5710 4 5 3 2 10 1 7 5 3 2 7 5 7 5 3 2 10 1 v gt = 2.5v v gm = 10v i fgt i, i rgt i, i rgt iii p g(av) = 0.5w p gm = 5w i gm = 2a 10 2 0.2 0.4 23 10 1 5710 0 23 5710 1 23 57 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 23 10 2 5710 3 0 10 1 10 3 7 5 3 2 60 20 20 10 2 7 5 3 2 60 100 140 160 4 4 40 0 40 80 120 10 1 10 3 7 5 3 2 60 20 20 10 2 7 5 3 2 60 100 140 160 4 4 40 0 40 80 120 i rgt i, i rgt iii i fgt i 30 20 50 0 10 40 50 40 30 20 10 0 160 120 100 60 20 0 40 0 40 80 140 10 20 30 v gd = 0.1v gate voltage (v) gate current (ma) gate characteristics ( , ? and ?? ) typical example gate trigger current vs. junction temperature junction temperature ( c) 100 (%) gate trigger current (t j = t c) gate trigger current (t j = 25 c) typical example gate trigger voltage vs. junction temperature junction temperature ( c) 100 (%) gate trigger voltage ( t j = t c ) gate trigger voltage ( t j = 25 c ) maximum transient thermal impedance characteristics (junction to case) transient thermal impedance ( c/w) conduction time (cycles at 60hz) 360 conduction resistive, inductive loads maximum on-state power dissipation on-state power dissipation (w) rms on-state current (a) curves apply regardless of conduction angle resistive, inductive loads allowable case temperature vs. rms on-state current case temperature ( c) rms on-state current (a)
mar. 2002 mitsubishi semiconductor ? triac ? bcr30am medium power use non-insulated type, planar passivation type the product guaranteed maximum junction temperature 150 c (see warning.) 60 40 20 140 160 60 40 20 080 100 120 10 1 10 3 7 5 3 2 10 2 7 5 3 2 4 4 012345 0 20 40 60 80 100 120 140 160 120 100 60 20 0 0 40 80 140 160 5 1015202530 160 160 t2.3 120 120 t2.3 100 100 t2.3 60 40 20 0 20 40 60 80 100 120 140 160 160 0 80 60 40 20 100 120 140 140 160 40 40 60 20 0 20 60 80 100 120 10 5 7 5 3 2 10 4 7 5 3 2 10 3 7 5 3 2 10 2 160 0 23 10 1 5710 2 23 5710 3 23 5710 4 80 60 40 20 100 120 140 allowable ambient temperature vs. rms on-state current ambient temperature ( c) rms on-state current (a) all fins are black painted aluminum and greased natural convection resistive, inductive loads curves apply regardless of conduction angle allowable ambient temperature vs. rms on-state current ambient temperature ( c) rms on-state current (a) natural convection no fins curves apply regardless of conduction angle resistive, inductive loads typical example repetitive peak off-state current vs. junction temperature junction temperature ( c) 100 (%) repetitive peak off-state current ( t j = t c ) repetitive peak off-state current ( t j = 25 c ) typical example holding current vs. junction temperature junction temperature ( c) 100 (%) holding current ( t j = t c ) holding current ( t j = 25 c ) typical example breakover voltage vs. junction temperature junction temperature ( c) 100 (%) breakover voltage ( t j = t c ) breakover voltage ( t j = 25 c ) breakover voltage vs. rate of rise of off-state voltage (t j = 125 c) rate of rise of off-state voltage (v/ s) 100 (%) breakover voltage ( dv/dt = xv/ s ) breakover voltage ( dv/dt = 1v/ s ) typical example t j = 125 c i quadrant iii quadrant
mar. 2002 mitsubishi semiconductor ? triac ? bcr30am medium power use non-insulated type, planar passivation type the product guaranteed maximum junction temperature 150 c (see warning.) c 1 c 0 r 0 r 1 load 10 1 10 3 7 5 3 2 10 0 23 5710 1 10 2 7 5 3 2 23 5710 2 4 4 44 i fgt i i rgt iii i rgt i 6 ? 6 ? 6 ? 6v 6v 6v r g r g r g a v a v a v 160 0 23 10 1 5710 2 23 5710 3 23 5710 4 80 60 40 20 100 120 140 10 1 23 5710 2 10 0 10 1 7 2 3 5 7 10 2 2 3 5 7 23 5710 3 10 1 23 5710 2 10 0 10 1 7 2 3 5 7 10 2 2 3 5 7 23 5710 3 breakover voltage vs. rate of rise of off-state voltage (t j = 150 c) rate of rise of off-state voltage (v/ s) 100 (%) breakover voltage ( dv/dt = xv/ s ) breakover voltage ( dv/dt = 1v/ s ) typical example t j = 150 c i quadrant iii quadrant critical rate of rise of off-state commutating voltage (v/ s) rate of decay of on-state commutating current (a /ms) typical example t c = 125 c i t = 4a = 500 s v d = 200v f = 3hz i quadrant iii quadrant minimum charac- teristics value supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c commutation characteristics (t j = 125 c) critical rate of rise of off-state commutating voltage (v/ s) rate of decay of on-state commutating current (a /ms) typical example t c = 150 c i t = 4a = 500 s v d = 200v f = 3hz i quadrant iii quadrant minimum charac- teristics value supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c commutation characteristics (t j = 150 c) gate trigger current vs. gate current pulse width gate current pulse width ( s) 100 (%) gate trigger current ( tw ) gate trigger current ( dc ) typical example test procedure 1 test procedure 3 test procedure 2 gate trigger characteristics test circuits c 1 = 0.1~0.47 f r 1 = 47~100 ? c 0 = 0.1 f r 0 = 100 ? recommended circuit values around the triac
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